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Semiconductor light-emitting device and method for manufacturing same
US8963176B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963176-B2 |
| Application number | US-201313835371-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | Mar 8, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
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According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t b of the barrier layer is 10 nanometers or less.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor light-emitting device comprising: an n-type semiconductor layer having a face equivalent to a C-surface and including a nitride semiconductor; a p-type semiconductor layer including a nitride semiconductor; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including: a barrier layer including In b Ga 1-b N (0≦b<1) and having a layer thickness t b (nanometers); and a…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10H20/811Primary
Electricity · mapped topic
- H10H20/825Primary
Electricity · mapped topic
- B82Y20/00Primary
Operations & Transport · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963176B2 cover?
- According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well l…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/811. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).