III nitride crystal substrate and light-emitting device

Patent metadata

Field	Value
Publication number	US-8963166-B2
Application number	US-201314010558-A
Country	US
Kind code	B2
Filing date	Aug 27, 2013
Priority date	Nov 30, 2007
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm 2 and is characterized by: edge dislocations in the crystal being concentrated along propagation lines forming an angle of some 0° to 5° with a given {0001} plane of the crystal; screw dislocations in the crystal being concentrated along propagation lines forming an angle of some 45° to 60° with the given {0001} plane; and in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density being between 1×10 4 cm −2 to 3×10 6 cm −2 inclusive, and the ratio of screw-dislocation density to the total dislocation density being 0.5 or greater.

First claim

What is claimed is:

1. A Group-III nitride crystal substrate having a major face whose surface area is not less than 10 cm 2 , the III-nitride crystal substrate characterized by:
edge dislocations in the crystal being concentrated along propagation lines forming an angle of some 0° to 5° with a given {0001} plane of the crystal;
screw dislocations in the crystal being concentrated along propagation lines forming an angle of some 45° to 60° with the given {0001} plane; and
in a…

Assignees

• Sumitomo Electric Industries

Inventors

• Fujiwara Shinsuke
• Yoshida Hiroaki

Classifications

• H10P14/3416

  Electricity · mapped topic

• H10P14/3216

  Electricity · mapped topic

• H10P14/2925

  Electricity · mapped topic

• H10P14/2908

  Electricity · mapped topic

• H10P14/263

  Electricity · mapped topic