Semiconductor device
US-2024413252-A1 · Dec 12, 2024 · US
Thin film transistor and organic light emitting display device having the same
US8963153B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963153-B2 |
| Application number | US-91065010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2010 |
| Priority date | Oct 27, 2009 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A thin film transistor (TFT) comprising: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the substrate and the gate electrode; an active layer formed on the gate insulating layer; a protection layer formed on the active layer; a source electrode formed over the active layer, wherein the entire source electrode has a substantially linear shape; and a drain electrode formed to substantially surround at least…
Assignees
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Classifications
Electricity · mapped topic
- H10D30/6729Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L27/3262Primary
Electricity · mapped topic
- H10K59/1213Primary
Electricity · mapped topic
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- What does patent US8963153B2 cover?
- A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to s…
- Who is the assignee on this patent?
- Choo Byoung-Kwon, Cho Kyu-Sik, Lee Won-Kyu, and 8 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6729. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).