Active matrix substrate and liquid crystal display device
US-2024377690-A1 · Nov 14, 2024 · US
US8963152B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963152-B2 |
| Application number | US-86751008-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 9, 2008 |
| Priority date | Feb 19, 2008 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A distance (d 1 ) from an edge of a first region (R) at places (D) where branch electrodes ( 4 b ) extending, which branch off from an electrode line ( 4 a ) of a second source/drain electrode ( 4 ), start to overlap with a first region (R) to the electrode line ( 4 a ) is 5 μm or more. This realizes a TFT including a comb-shaped source/drain structure that enables easy repair of a source-drain leakage.
Opening claim text (preview).
The invention claimed is: 1. A TFT comprising a gate electrode, a first source/drain electrode, and a second source/drain electrode, one of the first source/drain electrode and the second source/drain electrode being a source electrode and the other being a drain electrode, the TFT including an i layer and a stack in which an n + layer is stacked on the i layer, the i layer and the stack being formed from a semiconductor material and disposed above the gate electrode but with a d…
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