Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
Nitride-based heterostructure field effect transistor having high efficiency
US8963151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963151-B2 |
| Application number | US-201113226108-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2011 |
| Priority date | May 3, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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A high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (Si x C 1-x ) functional layer formed on the AlGaN layer.
First claim
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What is claimed is: 1. A heterostructure field effect transistor (HFET) comprising: a substrate; a semi-insulating gallium nitride (GaN) layer formed on the substrate; an aluminum gallium nitride (AlGaN) layer formed on the GaN layer; and a silicon carbide (Si x C 1-x ) functional layer formed on the AlGaN layer, wherein x of the Si x C 1-x functional layer has a value in a range of 0.6<x<1, and wherein the Si x C 1-x functional layer is disposed to cover an entire surface of the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/4755Primary
Electricity · mapped topic
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- What does patent US8963151B2 cover?
- A high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (Si x C 1-x ) functional layer formed on the AlGaN layer.
- Who is the assignee on this patent?
- Lee Jae Hoon, Kim Ki Se, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/4755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).