Thin film transistor

Patent metadata

Field	Value
Publication number	US-8963149-B2
Application number	US-201414297733-A
Country	US
Kind code	B2
Filing date	Jun 6, 2014
Priority date	Nov 20, 2009
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

First claim

The invention claimed is:

1. A transistor comprising:
a gate electrode;
a gate insulating film overlapping with the gate electrode;
an oxide semiconductor film overlapping with the gate electrode with the gate insulating film interposed therebetween; and
a titanium film overlapping with the oxide semiconductor film,
wherein the oxide semiconductor film contains at least one of indium, gallium, and zinc,
wherein the oxide semiconductor film includes a first region and a s…

Assignees

• Semiconductor Energy Lab

Inventors

• Miyanaga Akiharu
• Sakata Junichiro
• Sakakura Masayuki
• Takahashi Masahiro
• Kishida Hideyuki
• Yamazaki Shunpei

Classifications

• H10D30/6732

  Electricity · mapped topic

• H10D62/17

  Electricity · mapped topic

• H10D30/6729

  Electricity · mapped topic

• H10D30/6713

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic