Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods

Patent metadata

Field	Value
Publication number	US-8963121-B2
Application number	US-201213708526-A
Country	US
Kind code	B2
Filing date	Dec 7, 2012
Priority date	Dec 7, 2012
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

First claim

We claim:

1. A solid state transducer (SST) die, comprising:
a transducer structure having a first side and a second side opposite the first side, a first semiconductor material at the first side and a second semiconductor material at the second side;
a plurality of first contacts, with individual first contacts electrically coupled to the first semiconductor material;
a plurality of second contacts, with second contacts electrically coupled to the second semiconductor materia…

Assignees

• Micron Technology Inc

Inventors

• Odnoblyudov Vladimir
• Schubert Martin F

Classifications

• H10P54/00

  Electricity · mapped topic

• H10W72/884

  Electricity · mapped topic

• H10W90/00

  Electricity · mapped topic

• H10D84/00

  Electricity · mapped topic

• H10H20/8583

  Electricity · mapped topic