Novel compounds as hif-1 alpha inhibitors and manufacturing process thereof
US-2016193215-A1 · Jul 7, 2016 · US
Thermally stable volatile film precursors
US8962876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962876-B2 |
| Application number | US-201013319793-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 17, 2010 |
| Priority date | May 15, 2009 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.
First claim
Opening claim text (preview).
What is claimed is: 1. A compound having formula 1: M x L y 1 wherein M is a transition metal; x is 1 or 2; y is an integer from 1 to 4; L is N(R 1 R 2 )—N═C(R 3 )—O or OC(R 4 )—N(R 5 ); R 1 , R 2 , R 3 , R 4 , R 5 are each independently hydrogen, C 1-12 alkyl or C 6-12 aryl, Si(R 6 ) 3 , or Ge(R 6 ) 3 ; and R 6 is hydrogen, C 1-12 alkyl or C 6-12 aryl, wherein y is 2 when x is 1 and y is 4 when x is 2. 2. The compound of clai…
Assignees
Inventors
Classifications
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8962876B2 cover?
- A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.
- Who is the assignee on this patent?
- Winter Charles H, Knisley Thomas Joseph, Karunarathne Panditha Koralalage Don Mahesh Chinth, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C07C233/05. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).