Multi-stack nanosheet structure including semiconductor device
US-2024023326-A1 · Jan 18, 2024 · US
US8962467B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962467-B2 |
| Application number | US-201213399266-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2012 |
| Priority date | Feb 17, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Official abstract text for this publication.
Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow circuits. At the same time, prior to fuse blow, the fuse structure is able to operate normally. The damaged portion of the fuse conductor is made by forming an opening in a cap layer above a portion of the fuse conductor, and etching the fuse conductor. Preferably, the opening is aligned such that the damaged portion is on the top corner of the fuse conductor. A cavity can be formed in the insulator adjacent to the damaged fuse conductor. The damaged fuse structure having a cavity can be easily incorporated in a process of making integrated circuits having air gaps.
Opening claim text (preview).
What is claimed is: 1. The method of forming a fuse structure comprising: providing a substrate having a first level comprising a first conductor and a first insulator; providing a fuse level above the first level, wherein the fuse level has a fuse insulator, a fuse conductor, and a cap layer above the fuse insulator and the fuse conductor; forming an opening in the cap layer; damaging a portion of the fuse conductor thereby forming a damaged portion of the fuse conductor; a…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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