Isolated Semiconductor Layer Over Buried Isolation Layer
US-2016379866-A1 · Dec 29, 2016 · US
Method of making a semiconductor layer having at least two different thicknesses
US8962399B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962399-B2 |
| Application number | US-201414177593-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2014 |
| Priority date | Feb 11, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A method is provided for producing a semiconductor layer having at least two different thicknesses from a stack of the semiconductor on insulator type including at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method including etching the first layer so that said layer is continuous and includes at least one first region having a thickness less than that of at least one second region; oxidizing the first layer to form an electrically insulating oxide film on a surface thereof so that, in the first region, the oxide film extends as far as the insulating layer; partly removing the oxide film to bare the first layer outside the first region; forming a second semiconductor layer on the stack, to form, with the first layer, a third continuous semiconductor layer having a different thickness than that of the first and second regions.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing a semiconductor layer having at least two different thicknesses (TSi1, TSi2) from a stack of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method comprising at least a sequence comprising the following steps: etching of the first semiconductor layer so that the first semiconductor layer is continuous and comprises a…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8962399B2 cover?
- A method is provided for producing a semiconductor layer having at least two different thicknesses from a stack of the semiconductor on insulator type including at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method including etching the first layer so that said layer is continuous and includes at least one first region having a…
- Who is the assignee on this patent?
- Commissariat Energie Atomique, St Microelectronics Crolles 2, St Microelectronics Sa, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1912. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).