Top notch slit profile for mems device
US-2024381034-A1 · Nov 14, 2024 · US
US8962389B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962389-B2 |
| Application number | US-201313906161-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 30, 2013 |
| Priority date | May 30, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Embodiments of microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the fabrication method includes printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, such as a central keep-out area. The die attach material, such as a B-stage epoxy, is printed onto the wafer in a predetermined pattern such that the die attach material does not encroaching into the interior keep-out areas. The wafer is singulated to produce singulated microelectronic die each including a layer of die attach material. The singulated microelectronic die are then placed onto leadframes or other package substrates with the die attach material contacting the package substrates. The layer of die attach material is then fully cured to adhere an outer peripheral portion of the singulated microelectronic die to its package substrate.
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a plurality of microelectronic packages, the method comprising: printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, the patterned die attach material not encroaching into the interior keep-out areas of the array of non-singulated microelectronic die; after printing the patterned die attach material onto the backside of…
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