Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8962386-B2
Application number	US-201213674175-A
Country	US
Kind code	B2
Filing date	Nov 12, 2012
Priority date	Nov 25, 2011
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode including oxygen;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film overlapping with the gate electrode with the gate insulating film therebetween; and
performing heat treatment to supply oxygen from the gate electrode to the oxide semiconductor film through the gate insulating film.

2. The…

Assignees

• Semiconductor Energy Lab

Inventors

• Godo Hiromichi
• Tanaka Tetsuhiro

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/3426

  Electricity · mapped topic

• H10D30/031

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/6739 Primary

  Electricity · mapped topic