Phase change memory
US-9515259-B2 · Dec 6, 2016 · US
Memory cells having heaters with angled sidewalls
US8962384B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962384-B2 |
| Application number | US-201213354966-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 20, 2012 |
| Priority date | Jan 20, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming an array of resistive memory cells, the method comprising: forming a first resistive memory cell having a first heater element angled with respect to a vertical plane; forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater; forming a first dielectric material and a second dielectric material between the…
Assignees
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Classifications
Electricity · mapped topic
- H01L45/065Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8962384B2 cover?
- Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second…
- Who is the assignee on this patent?
- Redaelli Andrea, Servalli Giorgio, Petruzza Pietro, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H01L45/065. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).