Cigs film, and cigs solar cell employing the same
US-2015380589-A1 · Dec 31, 2015 · US
US8962379B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962379-B2 |
| Application number | US-201214241007-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 5, 2012 |
| Priority date | Sep 7, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.
Opening claim text (preview).
The invention claimed is: 1. A method for producing a CIGS film to be used as a light absorbing layer for a CIGS solar cell, the method comprising: stacking a layer (A) comprising indium, gallium and selenium and a layer (B) comprising copper and selenium in a solid phase in this order over a substrate; and heating a stacked structure including the layer (A) and the layer (B) to melt the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A…
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