Photoelectric conversion device and fabrication method therefor

US8962372B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8962372-B2
Application numberUS-201414224755-A
CountryUS
Kind codeB2
Filing dateMar 25, 2014
Priority dateSep 27, 2005
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of fabricating a photoelectric conversion device, comprising the steps of: forming on a substrate a film covering a photoelectric conversion element and a gate electrode of a transistor; forming a first portion on at least a part of a light receiving surface of the photoelectric conversion element, and a side wall on the gate electrode for a lightly doped drain (LDD) structure of the transistor, wherein the first portion and the side wall ar…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8962372B2 cover?
A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger tha…
Who is the assignee on this patent?
Canon Kk
What technology area does this patent fall under?
Primary CPC classification H10F39/806. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).