CMOS compatible MEMS microphone and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8962368-B2
Application number	US-201313949519-A
Country	US
Kind code	B2
Filing date	Jul 24, 2013
Priority date	Jul 24, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portions thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap, provided between the diaphragm and the microphone backplate, wherein a spacer forming a boundary of the air gap is provided outside of the diaphragm or on the edge of the diaphragm.

First claim

What is claimed is:

1. A method for manufacturing a CMOS compatible MEMS microphone, comprising:
forming a microphone diaphragm by patterning the silicon device layer of an SOI substrate and doping the microphone diaphragm so as to make the microphone diaphragm conductive;
forming a CMOS dielectric oxide layer on the silicon device layer and the microphone diaphragm;
forming a plurality of deep trenches and a plurality of shallow trenches in the CMOS dielectric oxide layer, wh…

Assignees

• Wang Zhe
• Goertek Inc

Inventors

• Wang Zhe

Classifications

• H04R31/00 Primary

  Electricity · mapped topic

• B81C1/00158 Primary

  Operations & Transport · mapped topic

• H04R2201/003

  Electricity · mapped topic

• H04R19/005

  Electricity · mapped topic