Method of etching ferroelectric capacitor stack
US-9224592-B2 · Dec 29, 2015 · US
Multi-step deposition of ferroelectric dielectric material
US8962350B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962350-B2 |
| Application number | US-201414169120-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 30, 2014 |
| Priority date | Feb 11, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.
First claim
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What is claimed is: 1. A method of fabricating an integrated circuit including a ferroelectric capacitor, comprising the steps of: depositing a first conductive film near a semiconducting surface of a body; then depositing ferroelectric material over the first conductive film by metalorganic chemical vapor deposition comprising the steps of: for a first time duration, introducing precursors of lead, zirconium, and titanium, and a solvent, at a first collective flow rate, and an…
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- H10P14/69398Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/68Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8962350B2 cover?
- Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in comb…
- Who is the assignee on this patent?
- Texas Instruments Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69398. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).