Magnetic memory device, and manufacturing method of magnetic memory device
US-2024315049-A1 · Sep 19, 2024 · US
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
US8962348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962348-B2 |
| Application number | US-201314032599-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2013 |
| Priority date | May 10, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
First claim
Opening claim text (preview).
We claim: 1. A method of forming a magnetic tunnel junction (MTJ); comprising: (a) forming a seed layer on a substrate, the seed layer consists of a Hf/NiCr, Hf/NiFeCr, NiFeCr/Hf, or NiCr/Hf configuration and a thickness of the NiCr layer or the NiFeCr layer is greater than a thickness of the Hf layer, the seed layer enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer; and (b) forming the laminated layer having instrinsic PMA that contacts a top surf…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8962348B2 cover?
- A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to…
- Who is the assignee on this patent?
- Headway Technologies Inc
- What technology area does this patent fall under?
- Primary CPC classification H10N50/85. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).