Capacitor and semiconductor device including the same
US-2024387608-A1 · Nov 21, 2024 · US
Semiconductor device and method of manufacturing the same
US8962347B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962347-B2 |
| Application number | US-201113301396-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 21, 2011 |
| Priority date | Jan 19, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, the method comprising: forming a lower electrode film above a semiconductor substrate; forming a dielectric film made of a ferroelectric material on the lower electrode film by a sputtering method; subjecting the dielectric film to a crystallization treatment; and forming a conductive oxide film on the dielectric film, the conductive oxide film being made of a ferroelectric material to which conductivit…
Assignees
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Classifications
- H10D1/684Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L27/11507Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8962347B2 cover?
- A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in con…
- Who is the assignee on this patent?
- Wang Wensheng, Fujitsu Semiconductor Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D1/684. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).