Laser processing method

Patent metadata

Field	Value
Publication number	US-8961806-B2
Application number	US-201113388597-A
Country	US
Kind code	B2
Filing date	Jul 19, 2011
Priority date	Jul 26, 2010
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

First claim

The invention claimed is:

1. A laser processing method comprising:
a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction as compared to a thickness direction of the object, the modified region forming step including,
(i) irradiating the object with the laser light while moving the laser light along a second lateral direction to form a plurality of modified spots along the second lateral direction, the second lateral direction being perpendicular to the first lateral direction, the plurality of modified spots overlapping each other in the second lateral direction to form a group of overlapping modified spots that extends in the second lateral direction,
(ii) moving a converging point of the laser light along the first lateral direction and the thickness direction, and
(iii) repeating steps (i) and (ii) so as to form a plurality of groups of overlapping modified spots along the modified region forming line, each group of overlapping modified spots also partially overlapping each other when viewed from the first lateral direction, and the plurality of groups of overlapping modified spots defining a modified region; and

an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely as compared to the thickness direction.

2. A laser processing method according to claim 1 , wherein the line extends along a (111) plane of the object.

3. A laser processing method according to claim 1 , wherein the space is a through hole opening to the front and rear faces of the object.

4. A laser processing method according to claim 1 , wherein the step (iii) is performed such that each group of overlapping modified spots do not overlap with each other when viewed from the second lateral direction.

5. A laser processing method according to claim 1 , wherein the step (i) is formed such that the group of overlapping modified spots forms a contiguous structure.

6. A laser processing method comprising:
a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction as compared to a thickness direction of the object, the modified region forming step including,
(i) irradiating the object with the laser light while moving the laser light along the first lateral direction to form a plurality of modified spots along the first lateral direction, the plurality of modified spots overlapping each other in the first lateral direction to form a group of overlapping modified spots that extends in the first lateral direction,
(ii) moving a converging point of the laser light along the first lateral direction and the thickness direction, and
(iii) repeating steps (i) and (ii) so as to form a plurality of groups of overlapping modified spots along the modified region forming line, each of the groups of overlapping modified spots also partially overlapping each other when viewed form the thickness direction, the plurality of groups of overlapping modified spots defining a modified region; and

an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely as compared to the thickness direction.

7. A laser processing method according to claim 6 , wherein the line extends along a (111) plane of the object.

8. A laser processing method according to claim 6 , wherein the space is a through hole opening to the front and rear faces of the object.

9. A laser processing method according to claim 6 , wherein the step (i) is formed such that the group of overlapping modified spots forms a contiguous structure.

Assignees

• Shimoi Hideki
• Kyushima Hiroyuki
• Araki Keisuke
• Hamamatsu Photonics Kk

Inventors

• Shimoi Hideki
• Kyushima Hiroyuki
• Araki Keisuke

Classifications

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W70/698 Primary

  Semiconductor materials that are electrically insulating, e.g. undoped silicon · CPC title