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US-2024381034-A1 · Nov 14, 2024 · US
Method of forming fine pattern, and developer
US8961802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961802-B2 |
| Application number | US-201313927464-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 26, 2013 |
| Priority date | Jun 28, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm 3 ) 1/2 , and having vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and the developing solution further contains metal alkoxide.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a fine pattern comprising: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation thereof; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer in the layer is decomposed; a selective removal step in which the layer is imm…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8961802B2 cover?
- A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decompose…
- Who is the assignee on this patent?
- Riken, Tokyo Ohka Kogyo Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B81C1/00531. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).