Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US8961801B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961801-B2 |
| Application number | US-86938110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2010 |
| Priority date | Aug 28, 2009 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
Opening claim text (preview).
The invention claimed is: 1. An imprint lithography method comprising: providing a substrate having (i) a first amount of imprintable medium for nanoimprint lithography on a first area of the substrate, the first amount of imprintable medium, when fixed, having a first etch rate as a physical characteristic thereof, and having (ii) a second amount of imprintable medium for nanoimprint lithography on a second area of the substrate different from the first area of the substrate, the…
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