Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
Method of manufacturing silicon single crystal, silicon single crystal, and wafer
US8961685B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961685-B2 |
| Application number | US-201113977495-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 10, 2011 |
| Priority date | Dec 28, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm 3 and the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50.
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The invention claimed is: 1. A method for manufacturing a silicon single crystal, comprising growing a p-type silicon single crystal by the Czochralski method from an initial silicon melt in which boron is present in a concentration not higher than 4E14 atoms/cm 3 , phosphorus is contained in the initial silicon melt, and the ratio of phosphorus concentration to boron concentration is not lower than 0.42 and not higher than 0.50, and setting the ratio of the rate of cooling of an e…
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- What does patent US8961685B2 cover?
- P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm 3 and the ratio of the phosphorus concentration to the boron …
- Who is the assignee on this patent?
- Nakai Katsuhiko, Ohkubo Masamichi, Siltronic Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D62/40. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).