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Method and system for dimensional uniformity using charged particle beam lithography
US8959463B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8959463-B2 |
| Application number | US-201313801554-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2013 |
| Priority date | Nov 8, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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Abstract
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A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fracturing or mask data preparation comprising: determining pattern exposure information that is capable of forming a reticle pattern on a resist-coated reticle with a charged particle beam writer, wherein the reticle is to be used to form a wafer pattern on a substrate using optical lithography, and wherein the determining comprises calculating a sensitivity of the wafer pattern to changes in resist exposure of the reticle, and wherein the de…
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Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Electricity · mapped topic
- G06F30/398Primary
Physics · mapped topic
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- What does patent US8959463B2 cover?
- A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is…
- Who is the assignee on this patent?
- D2S Inc
- What technology area does this patent fall under?
- Primary CPC classification G06F30/398. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).