Building block for electro-optical integrated indium-phosphide based phase modulator
US-2024272461-A1 · Aug 15, 2024 · US
Semiconductor optical modulator
US8958664B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8958664-B2 |
| Application number | US-201313775391-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2013 |
| Priority date | Mar 2, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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Abstract
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A semiconductor optical modulator includes a substrate; and a mesa portion having a first cladding layer disposed on the substrate, a core layer disposed on the first cladding layer, and a second cladding layer disposed on the core layer, the first cladding layer having a first conductivity type, the second cladding layer having a second conductivity type reverse to the first conductivity type. The core layer includes a first multi quantum well structure made from a first conductivity type semiconductor layer and a second multi quantum well structure made from an i-type semiconductor layer in which no impurity is intentionally doped. The second multi quantum well structure is disposed on the first cladding layer. The first multi quantum well structure is disposed on the second multi quantum well structure. The second cladding layer is disposed on the first multi quantum well structure.
First claim
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What is claimed is: 1. A semiconductor optical modulator comprising: a substrate; and a mesa portion having a first cladding layer disposed on the substrate, a core layer disposed on the first cladding layer, and a second cladding layer disposed on the core layer, the first cladding layer having a first conductivity type, the second cladding layer having a second conductivity type reverse to the first conductivity type, wherein the core layer includes a first multi quantum wel…
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Frequently asked questions
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- What does patent US8958664B2 cover?
- A semiconductor optical modulator includes a substrate; and a mesa portion having a first cladding layer disposed on the substrate, a core layer disposed on the first cladding layer, and a second cladding layer disposed on the core layer, the first cladding layer having a first conductivity type, the second cladding layer having a second conductivity type reverse to the first conductivity type.…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification G02F1/017. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).