Compressive scanning lidar
US-2015378011-A1 · Dec 31, 2015 · US
Semiconductor laser and optical semiconductor device
US8958451B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8958451-B2 |
| Application number | US-201414167102-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2014 |
| Priority date | Jan 31, 2013 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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- Title
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Abstract
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In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor laser comprising: a diffraction grating in which a first diffraction grating region that has a periodic structure with a first pitch, a second diffraction grating region that has a periodic structure with a second pitch different from the first pitch, and a third diffraction grating region that has the periodic structure with the first pitch are arranged sequentially and contiguously side by side along a direction of light propagation beginni…
Assignees
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Classifications
- H01S5/12Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01S5/1215Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8958451B2 cover?
- In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grati…
- Who is the assignee on this patent?
- Oclaro Japan Inc
- What technology area does this patent fall under?
- Primary CPC classification H01S5/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).