Nonvolatile memory device, operating method thereof, and memory system including the same
US-2024233827-A1 · Jul 11, 2024 · US
US8958243B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8958243-B2 |
| Application number | US-201314040832-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2013 |
| Priority date | Apr 19, 2013 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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A group classification method includes the following steps. Firstly, a voltage shift parameter table is established. The voltage shift parameter table includes a first positional parameter table corresponding to a first neighboring cell. Then, M N ICI patterns are determined according to N neighboring cells having a significant ICI effect. If the central cell has a first storing state, M N central cell threshold voltage shifts corresponding to the M N ICI patterns are determined according to the voltage shift parameter table, and the first storing state is divided into plural sub-regions. Afterwards, the central cells corresponding to a first number of ICI patterns are classified into a first group of the first storing state. The central cell threshold voltage shifts corresponding to the first number of ICI patterns lie in a first sub-region of the first storing state.
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What is claimed is: 1. A group classification method for a solid state storage device, the solid state storage device comprising a central cell and plural neighboring cells around the central cell, each of the central cell and the plural neighboring cells being programmable into one of M storing states, N neighboring cells of the plural neighboring cells having a significant ICI effect, the group classification method comprising steps of: establishing a voltage shift parameter tab…
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