Phase transition devices and smart capacitive devices
US-2015340607-A1 · Nov 26, 2015 · US
US8958239B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8958239-B2 |
| Application number | US-201213532981-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 26, 2012 |
| Priority date | Sep 26, 2011 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
Opening claim text (preview).
The invention claimed is: 1. A magnetic memory element, comprising: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein reading is performed by causing electrons to…
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