Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US8957585B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957585-B2 |
| Application number | US-201314141275-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 26, 2013 |
| Priority date | Oct 5, 2010 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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A solid-state light emitting device comprises a light transmissive thermally conductive circuit board; an array of solid-state light emitters (LEDs) mounted on, and electrically connected to, at least one face of the circuit board; and a photoluminescence wavelength conversion component. The wavelength conversion component comprises a mixture of particles of at least one photoluminescence material (phosphor) and particles of a light reflective material. The emission product of the device comprises the combined light generated by the LEDs and the photoluminescence material. The wavelength conversion component can comprise a layer of the phosphor material and particles of a light reflective material applied directly to the array of LEDs in the form of an encapsulant. Alternatively the photoluminescence component is a separate component and remote to the array of LEDs such as tubular component that surrounds the LEDs.
Opening claim text (preview).
What is claimed is: 1. A light emitting device comprising: a light transmissive circuit board; a first array of solid-state light emitters mounted on, and electrically connected to, a first face of the light transmissive circuit board, wherein the first array of solid-state light emitters are operable to generate excitation light; and a photoluminescence wavelength conversion component comprising a mixture of particles of at least one photoluminescence material and particles of a light reflective material, wherein the photoluminescence wavelength conversion component is configured such that in operation a portion of the excitation light generated by the first array solid-state light emitter is emitted through the photoluminescence wavelength conversion component to contribute to a final visible emission product. 2. The light emitting device of claim 1 , further comprising a second array of solid-state light emitters mounted on, and electrically connected to, a second face of the light transmissive circuit board. 3. The light emitting device of claim 1 , wherein the light transmissive circuit board has a transmittance of at least 50% to visible light. 4. The light emitting device of claim 1 , wherein the light transmissive circuit board is thermally conductive. 5. The light emitting device of claim 4 , wherein at least a part of the light transmissive circuit board is selected from the group consisting of: magnesium oxide, sapphire, aluminum oxide, quartz glass, aluminum nitride and diamond. 6. The light emitting device of claim 1 , wherein the photoluminescence component comprises a mixture of the at least one photoluminescence material and particles of the light reflective material applied directly to the, or each, array of solid-state light emitters. 7. The light emitting device of claim 1 , wherein the photoluminescence component is remote to the, or each, array of solid-state light emitters. 8. The light emitting device of claim 7 , wherein a surface of the wavelength conversion component is locatable at a distance of at least 5 mm from the plurality of solid-state light emitters. 9. The light emitting device of claim 7 , wherein the wavelength conversion component comprises a substantially cylindrical tube. 10. The light emitting device of claim 1 , wherein the light reflective material has a particle size in a range selected from the group consisting of: 0.01 μm to 10 μm; 0.01 μm to 1 μm and 0.1 μm to 1 μm. 11. The light emitting device of claim 1 , wherein a weight percent loading of light reflective material to the at least one photoluminescence material is in a range selected from the group consisting of: 0.01% to 10%; 0.01% to 1%; 0.1% to 1% and 0.5% to 1%. 12. The light emitting device of claim 1 , wherein the light reflective material is selected from the group consisting of: magnesium oxide, titanium dioxide, barium sulfate and combinations thereof. 13. The light emitting device of claim 1 , wherein the wavelength conversion component is selected from the group consisting of: a light transmissive substrate on which the mixture of photoluminescence material and light reflective material is provided as at least one layer and a light transmissive substrate having the mixture of photoluminescence material and light reflective material homogeneously distributed throughout its volume. 14. The light emitting device of claim 1 , wherein the particles of the light reflective material corresponds to a particle size such that the particles scatter excitation light generated by the solid-state light emitters relatively more than light generated by the at least one phosphor material. 15. The light emitting device of claim 1 , further comprising a light diffusing layer that is adjacent to the photoluminescence wavelength conversion component. 16. The light emitting device of claim 15 , in which the light diffusing layer comprises particles of light reflective material corresponding to a particle size such that the particles scatter excitation light generated by the solid-state light emitters relatively more than light generated by the at least one photoluminescence material. 17. The light emitting device of claim 16 , wherein the light reflective material has a particle size in a range 100 nm to 150 nm.
comprising a two-dimensional [2D] array of point-like light-generating elements · CPC title
Light-emitting diodes [LED] · CPC title
the substrate is supporting also the light source · CPC title
the material comprising photoluminescent substances · CPC title
Encapsulations, e.g. protective coatings · CPC title
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