Tunnel junction laminated film, magnetic memory element, and magnetic memory
US-2024284803-A1 · Aug 22, 2024 · US
Magnetic memory
US8957486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957486-B2 |
| Application number | US-200913147820-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2009 |
| Priority date | Mar 4, 2009 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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Abstract
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Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M s 2 (t/w)>|J ex |>(2k B TΔ)/S, in which k B is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and M s are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and J ex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.
First claim
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The invention claimed is: 1. A magnetic memory comprising: a magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer, the recording layer including a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer, the first ferromagnetic layer being antiferromagnetically coupled with the second ferromagnetic layer via the nonmagnetic layer, the magnetic memory being configured to record…
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Physics · mapped topic
Physics · mapped topic
- G11C11/16Primary
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8957486B2 cover?
- Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory…
- Who is the assignee on this patent?
- Ito Kenchi, Hayakawa Jun, Miura Katsuya, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G11C11/16. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).