Semiconductor structure and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8957481-B2
Application number	US-201113379407-A
Country	US
Kind code	B2
Filing date	May 11, 2011
Priority date	Sep 30, 2010
Publication date	Feb 17, 2015
Grant date	Feb 17, 2015

Abstract

The present application discloses a semiconductor structure and a method for manufacturing the same. Compared with conventional approaches to form contacts, the present disclosure reduces contact resistance and avoids a short circuit between a gate and contact plugs, while simplifying manufacturing process, increasing integration density, and lowering manufacture cost. According to the manufacturing method of the present disclosure, second shallow trench isolations are formed with an upper surface higher than an upper surface of the source/drain regions. Regions defined by sidewall spacers of the gate, sidewall spacers of the second shallow trench isolations, and the upper surface of the source/drain regions are formed as contact holes. The contacts are formed by filling the contact holes with a conductive material. The method omits the steps of etching for providing the contact holes, which lowers manufacture cost. By forming the contacts self-aligned with the gate, the method avoids misalignment and improves performance of the device while reducing a footprint of the device and lowering manufacture cost of the device.

First claim

The invention claimed is:

1. A semiconductor structure, comprising:
a semiconductor substrate;
at least one gate formed on the semiconductor substrate;
sidewall spacers adjacent to the gate;
source/drain regions on both sides of the gate;
contacts formed on the source/drain regions;
first shallow trench isolations which are embedded in the semiconductor substrate and have a length direction parallel to that of the gate; and
second shallow trench isolations which are se…

Assignees

• Zhu Huilong
• Zhong Huicai
• Yin Haizhou
• Luo Zhijiong
• Inst Of Microelectronics Cas

Inventors

• Zhu Huilong
• Zhong Huicai
• Yin Haizhou
• Luo Zhijiong

Classifications

• H10W10/0143

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014

  Electricity · mapped topic

• H10P50/695 Primary

  Electricity · mapped topic

• H10D62/021

  Electricity · mapped topic