Double exponential mechanism controlled transistor
US-2016380098-A1 · Dec 29, 2016 · US
US8957463B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957463-B2 |
| Application number | US-201213597610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2012 |
| Priority date | Aug 24, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.
Opening claim text (preview).
What is claimed is: 1. A gate tunable diode, the diode comprising: a gate dielectric formed on a gate electrode; a graphene electrode formed on the gate dielectric; a tunnel dielectric formed on the graphene electrode; a tunnel electrode formed on the tunnel dielectric; the graphene electrode connected to ground; the graphene electrode comprises a threshold voltage that increases in a negative direction when a gate voltage applied to the gate electrode is positive as com…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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