Light sensors and sources comprising at least one microcavity with a localized Tamm plasmon mode

Patent metadata

Field	Value
Publication number	US-8957445-B2
Application number	US-201113877212-A
Country	US
Kind code	B2
Filing date	Sep 28, 2011
Priority date	Sep 30, 2010
Publication date	Feb 17, 2015
Grant date	Feb 17, 2015

Abstract

A light source or sensor including: a stack of dielectric or semiconductive layers includes an alternation in a vertical direction of layers of high refractive index and of low refractive index forming an interference mirror, and presenting a top layer of high refractive index; at least one first metal pellet deposited or transferred on the top layer of the stack of layers to form a structure supporting a first Tamm plasmon mode that is spatially localized in at least one lateral direction perpendicular to the vertical direction; and at least one light emitter or detector arranged inside the stack of layers under the metal pellet and at a depth corresponding to a local maximum of the electric field of the Tamm plasmon mode to emit or detect radiation at the resonant wavelength thereof.

First claim

The invention claimed is:

1. A light source or sensor comprising:
a stack of dielectric or semiconductive layers comprising an alternation in a vertical direction of layers of high refractive index and of low refractive index forming an interference mirror, and presenting a top layer of high refractive index;
at least one first metal pellet deposited or transferred on the top layer of the stack of layers to form a structure supporting a first Tamm plasmon mode that is spatially localized in at least one lateral direction perpendicular to the vertical direction; and
at least one light emitter or detector arranged inside the stack of layers under the metal pellet and at a depth corresponding to a local maximum of the electric field of the Tamm plasmon mode to emit or detect radiation at the resonant wavelength λ thereof.

2. A light source or sensor according to claim 1 , wherein the or each metal pellet presents lateral dimensions that are less than or equal to 10λ, or less than or equal to 5λ, so as to support a Tamm plasmon mode that is localized in three dimensions.

3. A light source or sensor according to claim 1 , wherein the or each metal pellet presents a thickness greater than or equal to 40 nm.

4. A light source or sensor according to claim 1 , wherein the stack of layers presents lateral dimensions greater than or equal to 30λ, or greater than or equal to 100λ.

5. A light source or sensor according to claim 1 , wherein the layers of the stack are made of one or more semiconductor materials that are doped so as to establish electrical contact between the light emitter or detector and a first electrode.

6. A light source or sensor according to claim 1 , wherein a conductive layer of thickness that is not sufficient for supporting the first Tamm plasmon mode is deposited on the stack of layers.

7. A light source or sensor according to claim 1 , further comprising a dielectric layer deposited on the multilayer stack, the dielectric layer including an opening over the light emitter or detector, a metal layer being deposited over the dielectric layer to form the pellet at the opening.

8. A light source or sensor according to claim 1 , wherein the light emitter or detector is selected from a quantum dot, a quantum wire, and a quantum well.

9. A light source or sensor according to claim 8 , wherein the light emitter or detector is situated in an intrinsic region of a P-I-N junction.

10. A light source according to claim 1 , further comprising a second metal pellet adjacent to the first metal pellet, or partially overlapping the first metal pellet, so as to form a structure supporting a second Tamm plasmon mode that is localized in three dimensions and that is coupled with the first Tamm plasmon mode.

11. A light source according to claim 10 , wherein the light emitter is a quantum emitter presenting a ground state, two states with one elementary excitation, which states are degenerate and of different spins, and one state with two elementary excitations, and
wherein the first and second metal pellets are selected to be of substantially circular shape and of chemical composition, size, and relative arrangement such as to enable them to support a first pair of Tamm plasmon modes that are polarization degenerate and resonant with transitions between the state having two elementary excitations and the two degenerate states having one elementary excitation of the quantum emitter, and a second pair of Tamm plasmon modes that are polarization degenerate and resonant with transitions between the degenerate states having one elementary excitation and the ground state, whereby the source is capable of emitting pairs of photons that are polarization-entangled.

12. A light source according to claim 1 , wherein the metal pellet is a connection pad on a surface of a chip on which the stack of layers forming an interference mirror with the light emitter is transferred.

13. A light source or sensor according to claim 1 , comprising a plurality of pellets of different chemical compositions and/or thicknesses and/or lateral dimensions to form structures that support respective Tamm plasmon modes at different frequencies, and emitters or detectors placed under the pellets and resonant with the modes.

14. A light source or sensor according to claim 1 , wherein the or each pellet comprises a layer made of a first metal that is magnetic and magnetized, on which there is deposited a layer made of a second metal that is of higher conductivity.

15. A light source or sensor according to claim 14 , wherein the or each pellet further comprises a layer of insulating material forming a tunnel barrier under the layer made of the magnetized magnetic first metal.

Assignees

• Senellart Pascale
• Lemaitre Aristide
• Michaelis De Vasconcellos Steffen
• Gazzano Olivier
• Bellessa Joel
• Daniel Olivier
• Centre Nat Rech Scient
• Univ Claude Bernard Lyon

Inventors

• Senellart Pascale
• Lemaitre Aristide
• Michaelis De Vasconcellos Steffen
• Gazzano Olivier
• Bellessa Joel
• Daniel Olivier

Classifications

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/8142

  forming resonant cavity structures · CPC title

• H10H20/862

  Resonant cavity structures (formed by reflecting means in the bodies H10H20/8142) · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/407

  indirectly associated with the devices · CPC title