GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE
US-2015368832-A1 · Dec 24, 2015 · US
Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
US8957433B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957433-B2 |
| Application number | US-201313804453-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2013 |
| Priority date | Mar 28, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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Abstract
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A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.
First claim
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What is claimed is: 1. A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top, wherein the side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections, and wherein the side su…
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Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US8957433B2 cover?
- A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a botto…
- Who is the assignee on this patent?
- Sako Naoya, Ohara Takashi, Inoue Yoshiki, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification C30B25/186. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).