Transistor and display device
US-2024055533-A1 · Feb 15, 2024 · US
US8957415B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957415-B2 |
| Application number | US-201213664180-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2012 |
| Priority date | May 21, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb).
Opening claim text (preview).
What is claimed is: 1. A thin film transistor comprising: a gate electrode on a substrate; a source electrode on the gate electrode; a drain electrode at a same layer as the source electrode, and spaced apart from and facing the source electrode; an oxide semiconductor layer between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and a gate insulating layer between the gate electrode and the source electrode or between the…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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