Method for manufacturing semiconductor thick metal structure

Patent metadata

Field	Value
Publication number	US-8956972-B2
Application number	US-201214351828-A
Country	US
Kind code	B2
Filing date	Oct 12, 2012
Priority date	Oct 14, 2011
Publication date	Feb 17, 2015
Grant date	Feb 17, 2015

Abstract

A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 μm metal etching without residue. In the metal patterning step, N 2 is used for the protection of a sidewall to implement on a 4 μm metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4 μm metal concave-convex structure. A half-filled passivation filling structure is used to implement effective passivation protection of 1.5 um metal gaps having less than 4 um of metal thickness. Manufacturing of the 4 μm thick metal structure having a linewidth/gap of 1.5 μm/1.5 μm is finally implemented.

First claim

What is claimed is:

1. A method of manufacturing of a semiconductor thick metal structure, comprising:
a thick metal deposition step comprising: depositing a barrier layer, a metal layer, and an anti-reflection layer on a surface of a semiconductor chip, wherein the metal layer has a thickness of 3.5 μm to 4.5 μm; the anti-reflection layer comprises a titanium layer and a titanium nitride layer;
a metal patterning step comprising: coating a photoresist layer on the anti-reflecti…

Assignees

• Csmc Technologies Fab1 Co Ltd

Inventors

• Wu Hsiao-Chia
• Fang Shilin
• Lo Tse-Huang
• Chen Zhengpei
• Zhang Shu

Classifications

• H10P50/268

  Electricity · mapped topic

• H10P50/267

  Electricity · mapped topic

• H10P50/71

  Electricity · mapped topic

• H10P14/69433

  Electricity · mapped topic

• H10P14/69215

  Electricity · mapped topic