Contact landing pads for a semiconductor device and methods of making same

Patent metadata

Field	Value
Publication number	US-8951920-B2
Application number	US-201414446797-A
Country	US
Kind code	B2
Filing date	Jul 30, 2014
Priority date	Dec 11, 2011
Publication date	Feb 10, 2015
Grant date	Feb 10, 2015

Abstract

A method of forming a conductive contact landing pad and a transistor includes forming first and second spaced-apart active regions in a semiconducting substrate, forming a layer of gate insulation material on the first and second active regions, and performing an etching process to remove the layer of gate insulation material formed on the second active region so as to thereby expose the second active region. The method further includes performing a common process operation to form a gate electrode structure above the layer of gate insulation material on the first active region for the transistor and the conductive contact landing pad that is conductively coupled to the second active region, and forming a contact to the conductive contact landing pad.

First claim

What is claimed:

1. A method, comprising:
forming first and second spaced-apart active regions in a semiconducting substrate;
forming a conductive material layer above said first and second active regions during a same material deposition sequence;
patterning said conductive material layer during a same material patterning sequence so as to form a gate electrode of a transistor element above said first active region and to form a conductive contact landing pad above said secon…

Assignees

• Globalfoundries Inc

Inventors

• Jakubowski Frank
• Faul Juergen

Classifications

• H10W72/01953

  Electricity · mapped topic

• H10W72/01931

  Electricity · mapped topic

• H10D30/601 Primary

  Electricity · mapped topic

• H10D64/251

  Electricity · mapped topic

• H10D64/01 Primary

  Electricity · mapped topic