Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
US8951900B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8951900-B2 |
| Application number | US-201313870661-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2013 |
| Priority date | Mar 31, 2010 |
| Publication date | Feb 10, 2015 |
| Grant date | Feb 10, 2015 |
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Abstract
Official abstract text for this publication.
The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.
First claim
Opening claim text (preview).
What is claimed: 1. A method, comprising: forming an opening in a dielectric material of a contact level of a semiconductor device; selectively depositing a conductive material in said opening to form a contact element therein, said contact element extending to a contact area of a circuit element and comprising a laterally restricted excess portion formed outside of said opening and above said dielectric material; forming a sacrificial material layer above said dielectric mate…
Assignees
Inventors
Classifications
- H10W20/092Primary
Electricity · mapped topic
Electricity · mapped topic
- H10W20/062Primary
Electricity · mapped topic
- H01L21/7684Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8951900B2 cover?
- The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess po…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10W20/092. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).