Metrology method and associated metrology tool
US-2024288782-A1 · Aug 29, 2024 · US
US8947642B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8947642-B2 |
| Application number | US-201113010402-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 20, 2011 |
| Priority date | Feb 17, 2010 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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System and methods estimate model parameters of a lithographic apparatus and control lithographic processing by a lithographic apparatus. An exposure is performed using a lithographic apparatus across a wafer. A set of predetermined wafer measurement locations is obtained. Discrete orthonormal polynomials are generated using the predetermined substrate measurement locations. The overlay errors arising from the exposure are measured at the predetermined locations to obtain overlay measurements. The estimated model parameters of the lithographic apparatus are calculated from the overlay measurements by using the discrete orthogonal polynomials as a basis function to model the overlay across the wafer. Finally, the estimated model parameters are used to control the lithographic apparatus in order to provide corrected overlay across the wafer.
Opening claim text (preview).
What is claimed is: 1. A method comprising: performing a lithographic process using a lithographic apparatus across a substrate; using predetermined substrate measurement locations to generate discrete orthogonal polynomials; measuring a substrate property arising from the lithographic process at locations of the substrate corresponding to the predetermined measurement locations to obtain substrate property measurements; calculating estimated model parameters of the lithogra…
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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