Power/ground layout for chips

Patent metadata

Field	Value
Publication number	US-8946890-B2
Application number	US-201113277140-A
Country	US
Kind code	B2
Filing date	Oct 19, 2011
Priority date	Oct 20, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

Embodiments of the present disclosure provide a chip that comprises a base metal layer formed over a first semiconductor die and a first metal layer formed over the base metal layer. The first metal layer includes a plurality of islands configured to route at least one of (i) a ground signal or (ii) a power signal in the chip. The chip further comprises a second metal layer formed over the first metal layer. The second metal layer includes a plurality of islands configured to route at least one of (i) the ground signal or (ii) the power signal in the chip.

First claim

What is claimed is:

1. A chip comprising:
a base metal layer formed over a first semiconductor die;
a first metal layer that is separate from the base metal layer, the first metal layer having a plurality of islands individually surrounded along their entire periphery by a dielectric material, wherein the plurality of islands are configured to route at least one of (i) a ground signal or (ii) a power signal in the chip; and
a second metal layer that is separate from the first metal layer, the second metal layer having a plurality of islands individually surrounded along their entire periphery by a passivation material, wherein the plurality of islands are configured to route at least one of (i) the ground signal or (ii) the power signal in the chip,
wherein the plurality of islands of the first metal layer is configured to align with the plurality of islands of the second metal layer, and
wherein at least some of the plurality of islands of the first metal layer are connected to at least some of the plurality of islands of the second metal layer by vias.

2. The chip of claim 1 , wherein (i) the first metal layer comprises at least one of copper (Cu), nickel, aluminum (Al), aluminum-silicon alloy, or aluminum-copper alloy, and (ii) the second metal layer comprises at least one of copper (Cu), nickel, aluminum (Al), aluminum-silicon alloy, or aluminum-copper alloy.

3. The chip of claim 1 , wherein at least one of (i) the first metal layer and (ii) the second metal layer comprises openings defined therein to provide stress relief from thermal expansion of the first metal layer or the second metal layer.

4. The chip of claim 3 , wherein the openings are in a center location of (i) the first metal layer or (ii) the second metal layer.

5. The chip of claim 1 , wherein the plurality of islands in the first metal layer is configured to provide an electrical pathway to connect the power signal from the second metal layer to the base metal layer.

6. The chip of claim 1 , wherein the plurality of islands in the second metal layer is configured to provide an electrical pathway to connect the ground signal from the first metal layer to a second semiconductor die stacked on top of the chip.

7. The chip of claim 1 , wherein:
the first metal layer is a ground plane, and
the second metal layer is a power plane.

8. The chip of claim 1 , further comprising:
an insulating layer configured to separate the base metal layer from the first metal layer;
a dielectric layer comprising the dielectric material, wherein the dielectric layer is configured to separate the first metal layer from the second metal layer; and
a passivation layer configured to protect the second metal layer from exposure.

9. The chip of claim 1 , further comprising:
a passivation layer comprising the passivation material, wherein the passivation layer is formed over the second metal layer, and wherein the passivation layer includes one or more openings to expose contact points in the second metal layer; and
a second semiconductor die configured to stack on the one or more openings in the passivation layer to thereby electrically couple the second semiconductor die to the chip,
wherein the second semiconductor die is electrically coupled to the second metal layer through one of (i) a solder bump or (ii) a copper pillar and a solder bump.

10. A chip comprising:
a base metal layer formed over a first semiconductor die;
a first metal layer that is separate from the base metal layer, the first metal layer including (i) a first layer portion and (ii) a first island portion, wherein the first island portion is separated from the first layer portion by a first channel that surrounds the first island portion along the entire periphery of the first island portion; and
a second metal layer that is separate from the first metal layer, the second metal layer including (i) a second layer portion and (ii) a second island portion, wherein the second island portion is separated from the second layer portion by a second channel that surrounds the second island portion along the entire periphery of the second island portion, wherein the first island portion of the first metal layer is (i) configured to align with the second island portion of the second metal layer, and (ii) connected to the second island portion of the second metal layer by a via.

11. The chip of claim 10 , further comprising a passivation layer covering the second metal layer, wherein
the passivation layer includes an opening positioned to be substantially over the second island portion by a via, and
the opening provides relief from stress at least in the passivation layer and the second metal layer.

12. The chip of claim 10 , wherein the first island portion in the first metal layer is configured to provide an electrical pathway to connect a power signal from the second metal layer to the base metal layer.

13. The chip of claim 10 , wherein the second island portion in the second metal layer is configured to provide an electrical pathway to connect a ground signal from the first metal layer to a second semiconductor die stacked on top of the chip.

14. The chip of claim 10 , further comprising:
an insulating layer configured to separate the base metal layer from the first metal layer;
a dielectric layer configured to separate the first metal layer from the second metal layer; and
a passivation layer configured to protect the second metal layer from exposure.

15. The chip of claim 10 , further comprising:
a passivation layer formed over the second metal layer, the passivation layer including one or more openings configured to expose contact points on the second metal layer; and
a second semiconductor die configured to stack on the one or more openings of the passivation layer to thereby electrically couple the second semiconductor die to the chip,
wherein the second semiconductor die is electrically coupled to the second metal layer through one of (i) a solder bump or (ii) a copper pillar and a solder bump.

Assignees

• Sutardja Sehat
• Han Chung Chyung
• Li Weidan
• Yu Shuhua
• Cheng Chuan-Cheng
• Wu Albert
• Marvell World Trade Ltd

Inventors

• Sutardja Sehat
• Han Chung Chyung
• Li Weidan
• Yu Shuhua
• Cheng Chuan-Cheng
• Wu Albert

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title