Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
US-2015372032-A1 · Dec 24, 2015 · US
Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter
US8946795B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946795-B2 |
| Application number | US-201113050285-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2011 |
| Priority date | Mar 17, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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- Title
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Abstract
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Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
First claim
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The invention claimed is: 1. A pixel comprising: a photosensitive region formed in a surface of a substrate; and a floating node formed in the surface of the substrate; a transfer gate coupling the photosensitive region to the floating node; a source-follower amplification transistor including a drain and a gate, the source-follower gate electrically connected to the floating node; and a doped bridge formed in the surface of the substrate to couple, without intermediate co…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F39/1865Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L27/14656Primary
Electricity · mapped topic
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- What does patent US8946795B2 cover?
- Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coup…
- Who is the assignee on this patent?
- Chen Gang, Hu Sing-Chung, Mao Duli, and 6 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/1865. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).