Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-8946790-B2
Application number	US-201213488791-A
Country	US
Kind code	B2
Filing date	Jun 5, 2012
Priority date	Jun 10, 2011
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a c-axis aligned crystalline oxide semiconductor layer including indium, gallium, and zinc, the crystalline oxide semiconductor layer comprising a source region, a drain region, and a channel formation region;
a gate insulating layer over the channel formation region; and
a gate electrode over the channel formation region with the gate insulating layer positioned therebetween,
wherein the source region and the drain region are crystalline regions containing nitrogen.

2. The semiconductor device according to claim 1 , wherein the source region and the drain region have higher crystallinity than the channel formation region.

3. The semiconductor device according to claim 1 , wherein the gate electrode contains nitrogen.

4. The semiconductor device according to claim 1 , wherein the gate insulating layer does not overlap with the source region or the drain region.

5. The semiconductor device according to claim 1 , wherein the source region and the drain region have higher carrier density than the channel formation region.

6. The semiconductor device according to claim 1 , wherein the gate insulating layer includes hafnium oxide, yttrium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, hafnium aluminate, or lanthanum oxide.

7. A semiconductor device comprising:
a c-axis aligned crystalline oxide semiconductor layer including indium, gallium, and zinc, the crystalline oxide semiconductor layer comprising a source region, a drain region, and a channel formation region;
a gate insulating layer over the channel formation region;
a gate electrode over the channel formation region with the gate insulating layer positioned therebetween;
an insulating layer having openings and positioned over the crystalline oxide semiconductor layer and the gate electrode; and
a source electrode and a drain electrode respectively in contact with the source region and the drain region through the openings in the insulating layer,
wherein the source region and the drain region are crystalline regions containing nitrogen.

8. The semiconductor device according to claim 7 , wherein the source region and the drain region have higher crystallinity than the channel formation region.

9. The semiconductor device according to claim 7 , wherein the gate electrode contains nitrogen.

10. The semiconductor device according to claim 7 , wherein the gate insulating layer does not overlap with the source region or the drain region.

11. The semiconductor device according to claim 7 , wherein the source region and the drain region have higher carrier density than the channel formation region.

12. The semiconductor device according to claim 7 , wherein the gate insulating layer includes hafnium oxide, yttrium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, hafnium aluminate, or lanthanum oxide.

Assignees

• Yokoi Tomokazu
• Yamane Yasumasa
• Semiconductor Energy Lab

Inventors

• Yokoi Tomokazu
• Yamane Yasumasa

Classifications

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title