Micro led display panel
US-2024371838-A1 · Nov 7, 2024 · US
Semiconductor light emitting device
US8946751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946751-B2 |
| Application number | US-201314015095-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 30, 2013 |
| Priority date | Sep 7, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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- Title
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- Abstract
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- First independent claim
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Abstract
Official abstract text for this publication.
A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a first conductivity type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate; a first electrode disposed on a portion of the first conductivity-type semiconductor layer; a current diffusion layer disposed on the second conductivity-type semiconductor layer and including an opening; a second electrode disposed on a portion of the cu…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/833Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946751B2 cover?
- A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes a…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/833. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).