Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
Light emitting diode
US8946744B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946744-B2 |
| Application number | US-97460510-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2010 |
| Priority date | Dec 28, 2009 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting diode, comprising: a substrate; a lower semiconductor layer disposed on the substrate; an upper semiconductor layer disposed on the lower semiconductor layer, such that a portion of the lower semiconductor layer is exposed; a first electrode disposed on the upper semiconductor layer and directly on the exposed portion of the lower semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode for…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10H20/841Primary
Electricity · mapped topic
Electricity · mapped topic
- H10H20/8314Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946744B2 cover?
- The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor lay…
- Who is the assignee on this patent?
- Yoon Yeo Jin, Seo Won Cheol, Seoul Viosys Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/841. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).