Light-emitting device
US-12155019-B2 · Nov 26, 2024 · US
US8946737B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946737-B2 |
| Application number | US-201213570214-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 8, 2012 |
| Priority date | Dec 27, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Official abstract text for this publication.
A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.
Opening claim text (preview).
What is claimed is: 1. A light emitting diode (LED) comprising: a substrate having a first surface with a patterning structure formed on the first surface, the patterning structure comprising a plurality of projections; a buffer layer arranged on the first surface of the substrate; and an epitaxial structure arranged on the buffer layer, the epitaxial structure comprising a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer…
Electricity · mapped topic
Electricity · mapped topic
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