Light emitting diode and manufacturing method thereof

US8946737B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8946737-B2
Application numberUS-201213570214-A
CountryUS
Kind codeB2
Filing dateAug 8, 2012
Priority dateDec 27, 2011
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.

First claim

Opening claim text (preview).

What is claimed is: 1. A light emitting diode (LED) comprising: a substrate having a first surface with a patterning structure formed on the first surface, the patterning structure comprising a plurality of projections; a buffer layer arranged on the first surface of the substrate; and an epitaxial structure arranged on the buffer layer, the epitaxial structure comprising a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer…

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What does patent US8946737B2 cover?
A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a fir…
Who is the assignee on this patent?
Lin Ya-Wen, Tu Po-Min, Huang Shih-Cheng, and 3 more
What technology area does this patent fall under?
Primary CPC classification H10H20/82. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).