Chelating agents for quantum dot precursor materials in color conversion layers for micro-leds
US-2024194836-A1 · Jun 13, 2024 · US
Semiconductor light emitting device
US8946728B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946728-B2 |
| Application number | US-201113173392-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2011 |
| Priority date | Nov 1, 2010 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a light emission structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer disposed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a plurality of voids therein, wherein the plura…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946728B2 cover?
- A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void …
- Who is the assignee on this patent?
- Kim Kyu Sang, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/8511. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).