Semiconductor device

Patent metadata

Field	Value
Publication number	US-8946709-B2
Application number	US-201113045873-A
Country	US
Kind code	B2
Filing date	Mar 11, 2011
Priority date	Mar 19, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A semiconductor device with a novel structure is provided in which stored data can be held even when power is not supplied and the number of writing is not limited. The semiconductor includes a second transistor and a capacitor over a first transistor. The capacitor includes a source or drain electrode and a gate insulating layer of the second transistor and a capacitor electrode over an insulating layer which covers the second transistor. The gate electrode of the second transistor and the capacitor electrode overlap at least partly with each other with the insulating layer interposed therebetween. By forming the gate electrode of the second transistor and the capacitor electrode using different layers, an integration degree of the semiconductor device can be improved.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a memory cell comprising:
a first transistor comprising:
a first channel formation region;
a first gate insulating layer over the first channel formation region; and
a first gate electrode over the first gate insulating layer, the first gate electrode overlapping with the first channel formation region;

a second transistor over the first transistor, the second transistor comprising:
a second channel formati…

Assignees

• Kato Kiyoshi
• Nagatsuka Shuhei
• Semiconductor Energy Lab

Inventors

• Kato Kiyoshi
• Nagatsuka Shuhei

Classifications

• G11C16/0408

  Physics · mapped topic

• H10D1/692

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D88/00

  Electricity · mapped topic

• H10D86/423 Primary

  Electricity · mapped topic