Photoelectric conversion material
US-9224896-B2 · Dec 29, 2015 · US
Group III-nitrides on Si substrates using a nanostructured interlayer
US8946674B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946674-B2 |
| Application number | US-51261506-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2006 |
| Priority date | Aug 31, 2005 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured In x Ga 1-x N (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
First claim
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What is claimed is: 1. A layered group III-nitride article, comprising: a single crystal silicon comprising substrate; a nanostructured interlayer; said nanostructured interlayer comprising a nanostructured feature selected from the group consisting of a columnar film, a plurality of nanorods, a plurality of microrods, and a combination thereof; and a highly textured crystal group III-nitride layer, said highly textured group III-nitride layer being crack free and having a thic…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8946674B2 cover?
- A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon compr…
- Who is the assignee on this patent?
- Kryliouk Olga, Park Hyun Jong, Anderson Timothy J, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/36. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).