Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
US8946671B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946671-B2 |
| Application number | US-64224403-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2003 |
| Priority date | Nov 11, 2002 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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A mask read only memory containing diodes and method of manufacturing the same. The mask read only memory is a high-density three dimensional array formed by stacking a plurality of diode layers and the logic “0” or “1” is defined by whether there is a dielectric layer on the diode.
Opening claim text (preview).
What is claimed is: 1. A mask read only memory containing diodes, comprising: a semiconductor substrate; an insulating layer on the semiconductor substrate; at least two memory cell layers stacked on the insulating layer, each memory cell layer including: a first conductive line along a first direction on the insulating layer; a vertical diode on the first conductive line; a dielectric layer on the vertical diode; and a second conductive line along a second direction on…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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