Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-8946097-B2
Application number	US-201313860938-A
Country	US
Kind code	B2
Filing date	Apr 11, 2013
Priority date	Dec 8, 2009
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer, forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and after formation of an insulating layer including hydrogen over the insulating layer including oxygen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a gate electrode;
forming a first insulating layer over the gate electrode;
forming an oxide semiconductor layer over the first insulating layer; and
performing a first heat treatment after forming the oxide semiconductor layer;
wherein the first heat treatment is performed first in an inert gas atmosphere and then in a gas comprising oxygen.…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P95/94 Primary

  Electricity · mapped topic

• H10D30/031

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D86/423

  Electricity · mapped topic